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APT77N60JC3
600V 77A 0.035
Super Junction MOSFET
C OLMOS O
Power Semiconductors
S G D
S
SO
2 T-
27
* Ultra low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * N-Channel Enhancement Mode * Popular SOT-227 Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
"UL Recognized"
ISOTOP (R)
D G S
All Ratings: TC = 25C unless otherwise specified.
APT77N60JC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
600 77 231 20 30 568 4.55 -55 to 150 300 50 20 1
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/C C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
1800
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 .030 1.0 0.035 50 500 200 2.1 3 3.9
(VGS = 10V, ID = 60A)
Ohms A nA Volts
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.4mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
050-7146 Rev E
6-2004
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT77N60JC3
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 77A @ 25C RESISTIVE SWITCHING VGS = 10V VDD = 380V ID = 77A @ 125C RG = 0.9 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 77A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 77A, RG = 5
MIN
TYP
MAX
UNIT
13600 4400 290 505 48 240 18 27 110 8 1670 2880 2300 3100
MIN TYP MAX UNIT Amps Volts ns C pF
640
nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
165 12
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
77 231 1 861 46 6
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -77A)
1.2
Reverse Recovery Time (IS = -77A, dl S /dt = 100A/s, VR = 350V) Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/s, VR = 350V) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.22 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 36.0mH, RG = 25, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID77A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f
0.20
0.9
0.15
0.7
0.5 0.10 0.3 0.05 0.1 0.05 0 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
6-2004
050-7146 Rev E
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Junction temp. (C) RC MODEL
200 180
ID, DRAIN CURRENT (AMPERES)
APT77N60JC3
VGS =15 &10V 6V & 6.5V 5.5V
0.00999
0.00421F
160 140 120 100 80 60 40 20 0
0.0212 Power (watts) 0.0724
0.00198F
5V
0.0129F
4.5V 4V
0.116 Case temperature. (C)
0.314F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
200 180
ID, DRAIN CURRENT (AMPERES)
0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO = 10V @ 47A V
GS
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55C
160 140 120 100 80 60 40 20 0 TJ = +125C 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = +25C
1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80
VGS=10V
0
80 70
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85
40 60 80 100 120 140 160 180 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
20
60 50 40 30 20 10 0 25
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
3 2.5 2.0 1.5 1.0 0.5 0 -50
I V
D
= 47A = 10V
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
GS
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7146 Rev E
6-2004
Typical Performance Curves
231 100
C, CAPACITANCE (pF)
OPERATION HERE LIMITED BY RDS (ON)
60,000
APT77N60JC3
Ciss
ID, DRAIN CURRENT (AMPERES)
10,000 Coss 1,000
50
100S 10 5 TC =+25C TJ =+150C SINGLE PULSE 1mS 10mS
100 Crss 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 77A
IDR, REVERSE DRAIN CURRENT (AMPERES)
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
1
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 10
12 VDS= 120V 8 VDS= 300V VDS= 480V
4
100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 600 500 td(off)
V = 400V
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 250
V
DD G
1
= 400V
R
= 5
200
T = 125C
J
L = 100H
tf
td(on) and td(off) (ns)
400 300 200 100
DD G
R
= 5
T = 125C
J
L = 100H
tr and tf (ns)
150
100 tr 50
td(on) 0 10 70 90 110 130 150 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
30
50
70 90 110 130 150 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 16000 14000
SWITCHING ENERGY (J)
V I
DD
0 10
30
50
8000 7000
SWITCHING ENERGY (J)
V
= 400V
= 400V
R
= 5
T = 125C
J
D J
= 77A
T = 125C
6000 5000 4000 3000 2000 1000
L = 100H EON includes diode reverse recovery.
12000 10000 8000 6000 4000 2000
Eoff
L = 100H E ON includes diode reverse recovery.
Eoff
6-2004
Eon
Eon
050-7146 Rev E
70 90 110 130 150 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
30
50
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT77N60JC3
10% td(on) tr 90% 5% 10%
Switching Energy
Gate Voltage
T TJ = 125 C
90%
Gate Voltage
TJ = 125 C
td(off)
Collector Current
tf
90%
Collector Current
5%
Collector Voltage
Collector Voltage
0 10%
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7146 Rev E
6-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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